Автор туралы ақпарат
Saharov, A. V.
Шығарылым | Бөлім | Атауы | Файл |
Том 50, № 12 (2016) | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors | |
Том 52, № 7 (2018) | Physics of Semiconductor Devices | Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System |