Author Details
Cherkov, A. G.
Issue | Section | Title | File |
Vol 51, No 9 (2017) | Fabrication, Treatment, and Testing of Materials and Structures | Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films | |
Vol 51, No 10 (2017) | Fabrication, Treatment, and Testing of Materials and Structures | Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure | |
Vol 52, No 13 (2018) | Surfaces, Interfaces, and Thin Films | Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films |