Analysis of Nonlinear Distortions of Dphemt Structures Based on a GaAs/InGaAs Compound with Double-Sided Delta-Doping

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Resumo

The paper presents the results of studies of C–V characteristics of GaAs/In0.53Ga0.47As HEMT before and after neutron irradiation with a fluence of (6.3 ± 1.3) × 1014 cm–2. Based on the experimentally obtained characteristics, the effective electron distribution profiles of the structure were calculated before and after radiation impact. The effect of radiation defects on the δ-layers of the structure was analyzed.

Sobre autores

O. Golikov

Lobachevsky State University of Nizhny Novgorod (NNSU)

Email: tarasova@rf.unn.ru
Rússia, Nizhny Novgorod

N. Kodochigov

Lobachevsky State University of Nizhny Novgorod (NNSU)

Email: tarasova@rf.unn.ru
Rússia, Nizhny Novgorod

S. Obolensky

Lobachevsky State University of Nizhny Novgorod (NNSU)

Email: tarasova@rf.unn.ru
Rússia, Nizhny Novgorod

A. Puzanov

Lobachevsky State University of Nizhny Novgorod (NNSU)

Email: tarasova@rf.unn.ru
Rússia, Nizhny Novgorod

E. Tarasova

Lobachevsky State University of Nizhny Novgorod (NNSU)

Autor responsável pela correspondência
Email: tarasova@rf.unn.ru
Rússia, Nizhny Novgorod

S. Khazanova

Lobachevsky State University of Nizhny Novgorod (NNSU)

Email: tarasova@rf.unn.ru
Rússia, Nizhny Novgorod

Bibliografia

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  3. Petrovskaya A.N., Zubkov V.I. Capacitance-voltage measurements of heterostructures with InGaAs/GaAs quantum wells in the temperature range from 10 to 320 K // Semiconductors. 2009. V. 43. No. 10. P. 1368–1373.
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2. Fig. 1. Flow-gate VFCs of the investigated GaAs/In0.53Ga0.47As structure: before irradiation; after neutron irradiation; ○ experimental data; ○ numerical calculation

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3. Fig. 2. Results of modeling of the drain-gate VFC of the GaAs/In0.53Ga0.47As structure under study for the temperature of 77 K: 1 - before irradiation; 2 - after neutron irradiation

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4. Fig. 3. Results of modeling of the zone diagram of the GaAs/In0.53Ga0.47As structure under study: 1 - before irradiation; 2 - after neutron irradiation

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5. Fig. 4. Effective concentration profile of the GaAs/In0.53Ga0.47As structure under study: 1 - before irradiation; 2 - after neutron irradiation

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Declaração de direitos autorais © Russian Academy of Sciences, 2024

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