Мақаланы E-mail арқылы жіберу Hydrogen Plasma under Conditions of Electron-Cyclotron Resonance in Microelectronics Technology
- Авторлар: Polushkin E.1,2, Nefed’ev S.1, Koval’chuk A.2, Soltanovich O.2, Shapoval S.2
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Мекемелер:
- JSC Molecular Electronics Research Institute
- Institution of Science, Institute of Problems of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences
- Шығарылым: Том 52, № 3 (2023)
- Беттер: 236-239
- Бөлім: ТЕХНОЛОГИИ
- URL: https://journals.rcsi.science/0544-1269/article/view/138573
- DOI: https://doi.org/10.31857/S0544126923700321
- EDN: https://elibrary.ru/UECTWT
- ID: 138573
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
This paper presents the results of hydrogen electron-cyclotron resonance (ECR) plasma in micro-electronics technology. Its effect on the radiation resistance of the IC and on the quality of the ohmic contact during the formation of UBM metallization is demonstrated. The devices obtained with the use of plasma ECR and without it are analyzed.
Негізгі сөздер
Авторлар туралы
E. Polushkin
JSC Molecular Electronics Research Institute; Institution of Science, Institute of Problems of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences
Email: epolushkin@niime.ru
Moscow, Zelenograd, 124460 Russia; Chernogolovka, Moscow oblast, 142432 Russia
S. Nefed’ev
JSC Molecular Electronics Research Institute
Email: epolushkin@niime.ru
Moscow, Zelenograd, 124460 Russia
A. Koval’chuk
Institution of Science, Institute of Problems of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences
Email: epolushkin@niime.ru
Chernogolovka, Moscow oblast, 142432 Russia
O. Soltanovich
Institution of Science, Institute of Problems of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences
Email: epolushkin@niime.ru
Chernogolovka, Moscow oblast, 142432 Russia
S. Shapoval
Institution of Science, Institute of Problems of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: epolushkin@niime.ru
Chernogolovka, Moscow oblast, 142432 Russia
Әдебиет тізімі
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- Influence of diffusion hydrogen on the radiation hardness of silicon devices / E.A. Polushkin, A.V. Kovalchuk, O.A. Soltanovich [et al.] // Proceedings of SPIE V. 12157, International Conference on Micro- and Nano-Electronics 2021, 1215711 (2022). EDN MBGAEWhttps://doi.org/10.1117/12.2624184
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