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Effect of Gallium Nitride Film Growth Conditions on Surface Segregation
Tomashpolsky Y.Y., Matyuk V.M., Sadovskaya N.V.
Chemical interaction of InAs, InSb, GaAs, and GaSb crystal surfaces with (NH4)2Cr2O7–HBr–citric acid etching solutions
Tomashyk V.N., Malanych G.P., Stanetskaya A.S., Korchevoi A.A., Levchenko I.V., Stratiychuk I.B.
Chemical interaction of InAs, InSb, GaAs, and GaSb crystals with aqueous (NH4)2Cr2O7–HBr solutions
Levchenko I.V., Stratiychuk I.B., Tomashyk V.N., Malanych G.P., Stanetskaya A.S.
Growth of Gallium Nitride Micro- and Nanocrystallites on the Surface of Gallium Arsenide
Tomashpolsky Y.Y., Matyuk V.M., Sadovskaya N.V.
Preparation of Dielectric Films via Thermal Oxidation of MnO2/GaAs
Mittova I.Y., Sladkopevtsev B.V., Tomina E.V., Samsonov A.A., Tretyakov N.N., Ponomarenko S.V.
Synthesis of ZnO Thin Films Doped with Ga and In: Determination of Their Composition through X-Ray Spectroscopy and Inductively Coupled Plasma Mass Spectrometry
Filatova D.G., Vorobyeva N.A., Rumyantseva M.N., Baranovskaya V.B., Baranchikov A.E., Ivanov V.K., Gaskov A.M.
Calculation of the electronic structure and exchange interaction in the InSb and GaAs semiconductors codoped with Mn and Ni
Yarzhemsky V.G., Murashov S.V., Izotov A.D.
Synthesis and Crystal Structure of New Ce–Ru–Ga Ternary Intermetallic Phases with Known Structure Types
Murashova E.V., Kurenbaeva Z.M.
Chemically stimulated synthesis of gas-sensing films on the surface of GaAs
Kostryukov V.F., Mittova I.Y., Dimitrenko A.A.
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