Growth of Gallium Nitride Micro- and Nanocrystallites on the Surface of Gallium Arsenide

Yu. Ya. Tomashpolsky; V. M. Matyuk; N. V. Sadovskaya

doi:10.1134/S0020168518110146

Growth of Gallium Nitride Micro- and Nanocrystallites on the Surface of Gallium Arsenide

Authors: Tomashpolsky Y.Y.¹, Matyuk V.M.¹, Sadovskaya N.V.¹
Affiliations:
1. Karpov Institute of Physical Chemistry (Russian Federation State Scientific Center)
Issue: Vol 54, No 11 (2018)
Pages: 1099-1102
Section: Article
URL: https://journals.rcsi.science/0020-1685/article/view/158551
DOI: https://doi.org/10.1134/S0020168518110146
ID: 158551

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Abstract
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Abstract

As a result of heterosegregation, we have obtained a gallium nitride phase, including oriented micro- and nanocrystallites, on the surface of gallium arsenide. The mechanism underlying the growth of crystallites of the surface phase has been analyzed.

Keywords

surface heterosegregation, gallium nitride film, gallium arsenide

About the authors

Yu. Ya. Tomashpolsky

Karpov Institute of Physical Chemistry (Russian Federation State Scientific Center)

Author for correspondence.
Email: tomashpols@yandex.ru
Russian Federation, ul. Vorontsovo pole 10, Moscow, 105064

V. M. Matyuk

Karpov Institute of Physical Chemistry (Russian Federation State Scientific Center)

Email: tomashpols@yandex.ru
Russian Federation, ul. Vorontsovo pole 10, Moscow, 105064

N. V. Sadovskaya

Karpov Institute of Physical Chemistry (Russian Federation State Scientific Center)

Email: tomashpols@yandex.ru
Russian Federation, ul. Vorontsovo pole 10, Moscow, 105064

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