Growth of Gallium Nitride Micro- and Nanocrystallites on the Surface of Gallium Arsenide


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

As a result of heterosegregation, we have obtained a gallium nitride phase, including oriented micro- and nanocrystallites, on the surface of gallium arsenide. The mechanism underlying the growth of crystallites of the surface phase has been analyzed.

作者简介

Yu. Tomashpolsky

Karpov Institute of Physical Chemistry (Russian Federation State Scientific Center)

编辑信件的主要联系方式.
Email: tomashpols@yandex.ru
俄罗斯联邦, ul. Vorontsovo pole 10, Moscow, 105064

V. Matyuk

Karpov Institute of Physical Chemistry (Russian Federation State Scientific Center)

Email: tomashpols@yandex.ru
俄罗斯联邦, ul. Vorontsovo pole 10, Moscow, 105064

N. Sadovskaya

Karpov Institute of Physical Chemistry (Russian Federation State Scientific Center)

Email: tomashpols@yandex.ru
俄罗斯联邦, ul. Vorontsovo pole 10, Moscow, 105064

补充文件

附件文件
动作
1. JATS XML
下载

版权所有 © Pleiades Publishing, Ltd., 2018