Chemically stimulated synthesis of gas-sensing films on the surface of GaAs

Abstract

Thin nanofilms have been grown on the surface of GaAs via chemically stimulated thermal oxidation. The thickness of the oxide films on the surface of GaAs has been shown to be a nonlinear function of the composition of the mixture of the chemical oxide stimulators. The oxide films obtained, consisting predominantly of Ga₂O₃, contain small amounts (≤3 at %) of Sb₂O₃ and V₂O₅ and exhibit gas-sensing properties in ammonia and carbon monoxide atmospheres, with the highest NH₃ sensitivity of 1.29 in the temperature range 200–240°C and the highest CO sensitivity of 1.26 in the range 180–220°C.