Preparation of Dielectric Films via Thermal Oxidation of MnO2/GaAs

Abstract

MnO₂ nanolayers (~29 nm) produced on the surface of single-crystal GaAs wafers by magnetron sputtering have been shown to act as oxygen transfer agents for the thermal oxidation of the semiconductor. The presence of MnO₂ increases the oxide film growth rate by three to nine times relative to stimulator-free oxidation of GaAs. The films thus grown range in thickness from 35 to 200 nm and possess good dielectric properties (resistivity on the order of ~10¹⁰ Ω cm and dielectric strength in the range (5–8) × 10⁶ V/cm). According to X-ray diffraction data, the films are enriched in oxidized arsenic and have a regular grain structure in the surface layer, with a roughness height within 30 nm (according to atomic force microscopy data).