Effect of Gallium Nitride Film Growth Conditions on Surface Segregation
- Авторы: Tomashpolsky Y.Y.1, Matyuk V.M.1, Sadovskaya N.V.1
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Учреждения:
- Karpov Institute of Physical Chemistry (Russian State Scientific Center)
- Выпуск: Том 54, № 1 (2018)
- Страницы: 26-31
- Раздел: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158386
- DOI: https://doi.org/10.1134/S0020168518010168
- ID: 158386
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Аннотация
The micro-and nanomorphology and local composition of gallium nitride (GaN) films produced by four different procedures have been studied with the aim of detecting autosegregation phenomena. As a result, a complex autosegregation picture has been demonstrated and discussed. Independent of the growth procedure, all of the gallium nitride films have nonstoichiometric chemical compositions (gallium deficiency), with a degree of nonstoichiometry ranging from ~0.30 to <0.10. We discuss the segregation mechanism, which presumably involves predominant selective diffusion of nitrogen atoms to the surface.
Об авторах
Yu. Tomashpolsky
Karpov Institute of Physical Chemistry (Russian State Scientific Center)
Автор, ответственный за переписку.
Email: tomashpols@yandex.ru
Россия, per. Obukha 3-1/12, str. 6, Moscow, 105064
V. Matyuk
Karpov Institute of Physical Chemistry (Russian State Scientific Center)
Email: tomashpols@yandex.ru
Россия, per. Obukha 3-1/12, str. 6, Moscow, 105064
N. Sadovskaya
Karpov Institute of Physical Chemistry (Russian State Scientific Center)
Email: tomashpols@yandex.ru
Россия, per. Obukha 3-1/12, str. 6, Moscow, 105064
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