Synthesis of ZnO Thin Films Doped with Ga and In: Determination of Their Composition through X-Ray Spectroscopy and Inductively Coupled Plasma Mass Spectrometry
- Authors: Filatova D.G.1, Vorobyeva N.A.1, Rumyantseva M.N.1, Baranovskaya V.B.2, Baranchikov A.E.2, Ivanov V.K.2, Gaskov A.M.1
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Affiliations:
- Moscow State University
- Kurnakov Institute of General and Inorganic Chemistry
- Issue: Vol 53, No 14 (2017)
- Pages: 1458-1462
- Section: Analysis of Substances
- URL: https://journals.rcsi.science/0020-1685/article/view/158365
- DOI: https://doi.org/10.1134/S0020168517140060
- ID: 158365
Cite item
Abstract
An approach is proposed to study the composition of synthesized thin zinc films doped with In and Ga through local X-ray spectral analysis (LXSA) and inductively coupled plasma mass spectrometry (ICP-MS). A relationship between the amount/distribution of additives in the sample and synthesis conditions on rotating substrates is found. The results of determining the dominant impurities in film solutions with ICP-MS are used to validate those obtained with the LXSA method without sample preparation. To find doping impurities at an amount less than 1 at % is possible only through the ICP-MS method.
About the authors
D. G. Filatova
Moscow State University
Author for correspondence.
Email: gak1.analyt@gmail.com
Russian Federation, Moscow, 119991
N. A. Vorobyeva
Moscow State University
Email: gak1.analyt@gmail.com
Russian Federation, Moscow, 119991
M. N. Rumyantseva
Moscow State University
Email: gak1.analyt@gmail.com
Russian Federation, Moscow, 119991
V. B. Baranovskaya
Kurnakov Institute of General and Inorganic Chemistry
Email: gak1.analyt@gmail.com
Russian Federation, Moscow, 119991
A. E. Baranchikov
Kurnakov Institute of General and Inorganic Chemistry
Email: gak1.analyt@gmail.com
Russian Federation, Moscow, 119991
V. K. Ivanov
Kurnakov Institute of General and Inorganic Chemistry
Email: gak1.analyt@gmail.com
Russian Federation, Moscow, 119991
A. M. Gaskov
Moscow State University
Email: gak1.analyt@gmail.com
Russian Federation, Moscow, 119991
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