Chemical interaction of InAs, InSb, GaAs, and GaSb crystal surfaces with (NH4)2Cr2O7–HBr–citric acid etching solutions
- 作者: Tomashyk V.N.1, Malanych G.P.1, Stanetskaya A.S.1, Korchevoi A.A.1, Levchenko I.V.1, Stratiychuk I.B.1
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隶属关系:
- Lashkaryov Institute of Semiconductor Physics
- 期: 卷 53, 编号 11 (2017)
- 页面: 1109-1114
- 栏目: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158314
- DOI: https://doi.org/10.1134/S002016851711005X
- ID: 158314
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详细
We have studied the chemical dissolution of InAs, InSb, GaAs, and GaSb crystals in (NH4)2Cr2O7–HBr–C6H8O7 solutions. The dissolution rate of the crystals has been measured as a function of etchant composition, and the kinetics of the chemical interaction of the semiconductors with solutions have been investigated in detail. The dissolution rate has been shown to be diffusion-limited. Citric acid helps to reduce the etch rate and improves the polishing performance of the etching solutions.
作者简介
V. Tomashyk
Lashkaryov Institute of Semiconductor Physics
编辑信件的主要联系方式.
Email: tomashyk@isp.kiev.ua
乌克兰, pr. Nauki 41, Kyiv, 03028
G. Malanych
Lashkaryov Institute of Semiconductor Physics
Email: tomashyk@isp.kiev.ua
乌克兰, pr. Nauki 41, Kyiv, 03028
A. Stanetskaya
Lashkaryov Institute of Semiconductor Physics
Email: tomashyk@isp.kiev.ua
乌克兰, pr. Nauki 41, Kyiv, 03028
A. Korchevoi
Lashkaryov Institute of Semiconductor Physics
Email: tomashyk@isp.kiev.ua
乌克兰, pr. Nauki 41, Kyiv, 03028
I. Levchenko
Lashkaryov Institute of Semiconductor Physics
Email: tomashyk@isp.kiev.ua
乌克兰, pr. Nauki 41, Kyiv, 03028
I. Stratiychuk
Lashkaryov Institute of Semiconductor Physics
Email: tomashyk@isp.kiev.ua
乌克兰, pr. Nauki 41, Kyiv, 03028
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