Email this article Chemical interaction of InAs, InSb, GaAs, and GaSb crystal surfaces with (NH4)2Cr2O7–HBr–citric acid etching solutions
- Authors: Tomashyk V.N.1, Malanych G.P.1, Stanetskaya A.S.1, Korchevoi A.A.1, Levchenko I.V.1, Stratiychuk I.B.1
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Affiliations:
- Lashkaryov Institute of Semiconductor Physics
- Issue: Vol 53, No 11 (2017)
- Pages: 1109-1114
- Section: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158314
- DOI: https://doi.org/10.1134/S002016851711005X
- ID: 158314
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Abstract
We have studied the chemical dissolution of InAs, InSb, GaAs, and GaSb crystals in (NH4)2Cr2O7–HBr–C6H8O7 solutions. The dissolution rate of the crystals has been measured as a function of etchant composition, and the kinetics of the chemical interaction of the semiconductors with solutions have been investigated in detail. The dissolution rate has been shown to be diffusion-limited. Citric acid helps to reduce the etch rate and improves the polishing performance of the etching solutions.
About the authors
V. N. Tomashyk
Lashkaryov Institute of Semiconductor Physics
Author for correspondence.
Email: tomashyk@isp.kiev.ua
Ukraine, pr. Nauki 41, Kyiv, 03028
G. P. Malanych
Lashkaryov Institute of Semiconductor Physics
Email: tomashyk@isp.kiev.ua
Ukraine, pr. Nauki 41, Kyiv, 03028
A. S. Stanetskaya
Lashkaryov Institute of Semiconductor Physics
Email: tomashyk@isp.kiev.ua
Ukraine, pr. Nauki 41, Kyiv, 03028
A. A. Korchevoi
Lashkaryov Institute of Semiconductor Physics
Email: tomashyk@isp.kiev.ua
Ukraine, pr. Nauki 41, Kyiv, 03028
I. V. Levchenko
Lashkaryov Institute of Semiconductor Physics
Email: tomashyk@isp.kiev.ua
Ukraine, pr. Nauki 41, Kyiv, 03028
I. B. Stratiychuk
Lashkaryov Institute of Semiconductor Physics
Email: tomashyk@isp.kiev.ua
Ukraine, pr. Nauki 41, Kyiv, 03028
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