Analysis of the nBn-type barrier structures for infrared photodiode detectors
- 作者: Voitsekhovskii A.1, Gorn D.1
-
隶属关系:
- Tomsk State University
- 期: 卷 62, 编号 3 (2017)
- 页面: 314-316
- 栏目: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/198133
- DOI: https://doi.org/10.1134/S1064226917030214
- ID: 198133
如何引用文章
详细
Modern trends in the technology of CdxHg1–xTe-based photosensitive barrier structures for the middle and far infrared bands, which can operate at near-room temperatures, are analyzed. Main approaches to solving the problem of increasing the photodiode-detector operating temperature have been considered and analyzed.
关键词
作者简介
A. Voitsekhovskii
Tomsk State University
编辑信件的主要联系方式.
Email: vav43@mail.tsu.ru
俄罗斯联邦, Tomsk, 634050
D. Gorn
Tomsk State University
Email: vav43@mail.tsu.ru
俄罗斯联邦, Tomsk, 634050