Analysis of the nBn-type barrier structures for infrared photodiode detectors
- Authors: Voitsekhovskii A.V.1, Gorn D.I.1
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Affiliations:
- Tomsk State University
- Issue: Vol 62, No 3 (2017)
- Pages: 314-316
- Section: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/198133
- DOI: https://doi.org/10.1134/S1064226917030214
- ID: 198133
Cite item
Abstract
Modern trends in the technology of CdxHg1–xTe-based photosensitive barrier structures for the middle and far infrared bands, which can operate at near-room temperatures, are analyzed. Main approaches to solving the problem of increasing the photodiode-detector operating temperature have been considered and analyzed.
Keywords
About the authors
A. V. Voitsekhovskii
Tomsk State University
Author for correspondence.
Email: vav43@mail.tsu.ru
Russian Federation, Tomsk, 634050
D. I. Gorn
Tomsk State University
Email: vav43@mail.tsu.ru
Russian Federation, Tomsk, 634050