电邮这篇文章 Temperature dependence of diffusion length in MCT epitaxial layers
- 作者: Nikiforov I.1,2, Nikonov A.1,2, Boltar K.1,2, Iakovleva N.1
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隶属关系:
- Orion R&P Association Inc.
- Moscow Institute of Physics and Technology
- 期: 卷 61, 编号 3 (2016)
- 页面: 344-347
- 栏目: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/196860
- DOI: https://doi.org/10.1134/S1064226916030128
- ID: 196860
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详细
The temperature dependence of the minority charge carriers diffusion length in the active photosensitive layer of a matrix photodetector based on MCT heteroepitaxial structure grown by molecular beam epitaxy is studied.
作者简介
I. Nikiforov
Orion R&P Association Inc.; Moscow Institute of Physics and Technology
编辑信件的主要联系方式.
Email: orion@orion-ir.ru
俄罗斯联邦, 9 Kosinskaya str., Moscow, 111538; Institutski per. 9, Dolgoprudny, Moscow oblast, 141700
A. Nikonov
Orion R&P Association Inc.; Moscow Institute of Physics and Technology
Email: orion@orion-ir.ru
俄罗斯联邦, 9 Kosinskaya str., Moscow, 111538; Institutski per. 9, Dolgoprudny, Moscow oblast, 141700
K. Boltar
Orion R&P Association Inc.; Moscow Institute of Physics and Technology
Email: orion@orion-ir.ru
俄罗斯联邦, 9 Kosinskaya str., Moscow, 111538; Institutski per. 9, Dolgoprudny, Moscow oblast, 141700
N. Iakovleva
Orion R&P Association Inc.
Email: orion@orion-ir.ru
俄罗斯联邦, 9 Kosinskaya str., Moscow, 111538
