Enviar artigo por via de e-mail Temperature dependence of diffusion length in MCT epitaxial layers
- Autores: Nikiforov I.1,2, Nikonov A.1,2, Boltar K.1,2, Iakovleva N.1
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Afiliações:
- Orion R&P Association Inc.
- Moscow Institute of Physics and Technology
- Edição: Volume 61, Nº 3 (2016)
- Páginas: 344-347
- Seção: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/196860
- DOI: https://doi.org/10.1134/S1064226916030128
- ID: 196860
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Resumo
The temperature dependence of the minority charge carriers diffusion length in the active photosensitive layer of a matrix photodetector based on MCT heteroepitaxial structure grown by molecular beam epitaxy is studied.
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Sobre autores
I. Nikiforov
Orion R&P Association Inc.; Moscow Institute of Physics and Technology
Autor responsável pela correspondência
Email: orion@orion-ir.ru
Rússia, 9 Kosinskaya str., Moscow, 111538; Institutski per. 9, Dolgoprudny, Moscow oblast, 141700
A. Nikonov
Orion R&P Association Inc.; Moscow Institute of Physics and Technology
Email: orion@orion-ir.ru
Rússia, 9 Kosinskaya str., Moscow, 111538; Institutski per. 9, Dolgoprudny, Moscow oblast, 141700
K. Boltar
Orion R&P Association Inc.; Moscow Institute of Physics and Technology
Email: orion@orion-ir.ru
Rússia, 9 Kosinskaya str., Moscow, 111538; Institutski per. 9, Dolgoprudny, Moscow oblast, 141700
N. Iakovleva
Orion R&P Association Inc.
Email: orion@orion-ir.ru
Rússia, 9 Kosinskaya str., Moscow, 111538
