Email this article Temperature dependence of diffusion length in MCT epitaxial layers
- Authors: Nikiforov I.A.1,2, Nikonov A.V.1,2, Boltar K.O.1,2, Iakovleva N.I.1
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Affiliations:
- Orion R&P Association Inc.
- Moscow Institute of Physics and Technology
- Issue: Vol 61, No 3 (2016)
- Pages: 344-347
- Section: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/196860
- DOI: https://doi.org/10.1134/S1064226916030128
- ID: 196860
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Abstract
The temperature dependence of the minority charge carriers diffusion length in the active photosensitive layer of a matrix photodetector based on MCT heteroepitaxial structure grown by molecular beam epitaxy is studied.
About the authors
I. A. Nikiforov
Orion R&P Association Inc.; Moscow Institute of Physics and Technology
Author for correspondence.
Email: orion@orion-ir.ru
Russian Federation, 9 Kosinskaya str., Moscow, 111538; Institutski per. 9, Dolgoprudny, Moscow oblast, 141700
A. V. Nikonov
Orion R&P Association Inc.; Moscow Institute of Physics and Technology
Email: orion@orion-ir.ru
Russian Federation, 9 Kosinskaya str., Moscow, 111538; Institutski per. 9, Dolgoprudny, Moscow oblast, 141700
K. O. Boltar
Orion R&P Association Inc.; Moscow Institute of Physics and Technology
Email: orion@orion-ir.ru
Russian Federation, 9 Kosinskaya str., Moscow, 111538; Institutski per. 9, Dolgoprudny, Moscow oblast, 141700
N. I. Iakovleva
Orion R&P Association Inc.
Email: orion@orion-ir.ru
Russian Federation, 9 Kosinskaya str., Moscow, 111538
