Мақаланы E-mail арқылы жіберу Temperature dependence of diffusion length in MCT epitaxial layers
- Авторлар: Nikiforov I.1,2, Nikonov A.1,2, Boltar K.1,2, Iakovleva N.1
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Мекемелер:
- Orion R&P Association Inc.
- Moscow Institute of Physics and Technology
- Шығарылым: Том 61, № 3 (2016)
- Беттер: 344-347
- Бөлім: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/196860
- DOI: https://doi.org/10.1134/S1064226916030128
- ID: 196860
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
The temperature dependence of the minority charge carriers diffusion length in the active photosensitive layer of a matrix photodetector based on MCT heteroepitaxial structure grown by molecular beam epitaxy is studied.
Негізгі сөздер
Авторлар туралы
I. Nikiforov
Orion R&P Association Inc.; Moscow Institute of Physics and Technology
Хат алмасуға жауапты Автор.
Email: orion@orion-ir.ru
Ресей, 9 Kosinskaya str., Moscow, 111538; Institutski per. 9, Dolgoprudny, Moscow oblast, 141700
A. Nikonov
Orion R&P Association Inc.; Moscow Institute of Physics and Technology
Email: orion@orion-ir.ru
Ресей, 9 Kosinskaya str., Moscow, 111538; Institutski per. 9, Dolgoprudny, Moscow oblast, 141700
K. Boltar
Orion R&P Association Inc.; Moscow Institute of Physics and Technology
Email: orion@orion-ir.ru
Ресей, 9 Kosinskaya str., Moscow, 111538; Institutski per. 9, Dolgoprudny, Moscow oblast, 141700
N. Iakovleva
Orion R&P Association Inc.
Email: orion@orion-ir.ru
Ресей, 9 Kosinskaya str., Moscow, 111538
