320 × 256 avalanche array photodetector on the basis of ternary alloys of the A3B5 group with an InGaAs absorbing layer and an InAlAs barrier layer
- Autores: Iakovleva N.1, Boltar K.1,2, Sedneva M.1, Lopukhin A.1, Korotaev E.1
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Afiliações:
- OAO NPO Orion
- Moscow Institute of Physics and Technology (State University)
- Edição: Volume 61, Nº 3 (2016)
- Páginas: 348-351
- Seção: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/196865
- DOI: https://doi.org/10.1134/S1064226916030219
- ID: 196865
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Resumo
320 × 256 avalanche array photodetector on the basis ternary alloys of the A3B5 group with an InGaAs absorbing (in the band of 0.9–1.7 μm) layer and InAlAs barrier layer is studied. The array of 320 × 256 elements was fabricated in a nBp nanoheterostructure by the mesa technology. The number of imperfect elements, the dependence of the dark current on the bias voltage, and the avalanche gain factor are measured.
Sobre autores
N. Iakovleva
OAO NPO Orion
Autor responsável pela correspondência
Email: orion@orion-ir.ru
Rússia, Kosinskaya ul. 9, Moscow, 111538
K. Boltar
OAO NPO Orion; Moscow Institute of Physics and Technology (State University)
Email: orion@orion-ir.ru
Rússia, Kosinskaya ul. 9, Moscow, 111538; Institutskii per. 9, Dolgoprudnyi, Moscow oblast, 141700
M. Sedneva
OAO NPO Orion
Email: orion@orion-ir.ru
Rússia, Kosinskaya ul. 9, Moscow, 111538
A. Lopukhin
OAO NPO Orion
Email: orion@orion-ir.ru
Rússia, Kosinskaya ul. 9, Moscow, 111538
E. Korotaev
OAO NPO Orion
Email: orion@orion-ir.ru
Rússia, Kosinskaya ul. 9, Moscow, 111538