320 × 256 avalanche array photodetector on the basis of ternary alloys of the A3B5 group with an InGaAs absorbing layer and an InAlAs barrier layer

Abstract

320 × 256 avalanche array photodetector on the basis ternary alloys of the A₃B₅ group with an InGaAs absorbing (in the band of 0.9–1.7 μm) layer and InAlAs barrier layer is studied. The array of 320 × 256 elements was fabricated in a nBp nanoheterostructure by the mesa technology. The number of imperfect elements, the dependence of the dark current on the bias voltage, and the avalanche gain factor are measured.