320 × 256 avalanche array photodetector on the basis of ternary alloys of the A3B5 group with an InGaAs absorbing layer and an InAlAs barrier layer
- Авторы: Iakovleva N.1, Boltar K.1,2, Sedneva M.1, Lopukhin A.1, Korotaev E.1
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Учреждения:
- OAO NPO Orion
- Moscow Institute of Physics and Technology (State University)
- Выпуск: Том 61, № 3 (2016)
- Страницы: 348-351
- Раздел: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/196865
- DOI: https://doi.org/10.1134/S1064226916030219
- ID: 196865
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Аннотация
320 × 256 avalanche array photodetector on the basis ternary alloys of the A3B5 group with an InGaAs absorbing (in the band of 0.9–1.7 μm) layer and InAlAs barrier layer is studied. The array of 320 × 256 elements was fabricated in a nBp nanoheterostructure by the mesa technology. The number of imperfect elements, the dependence of the dark current on the bias voltage, and the avalanche gain factor are measured.
Об авторах
N. Iakovleva
OAO NPO Orion
Автор, ответственный за переписку.
Email: orion@orion-ir.ru
Россия, Kosinskaya ul. 9, Moscow, 111538
K. Boltar
OAO NPO Orion; Moscow Institute of Physics and Technology (State University)
Email: orion@orion-ir.ru
Россия, Kosinskaya ul. 9, Moscow, 111538; Institutskii per. 9, Dolgoprudnyi, Moscow oblast, 141700
M. Sedneva
OAO NPO Orion
Email: orion@orion-ir.ru
Россия, Kosinskaya ul. 9, Moscow, 111538
A. Lopukhin
OAO NPO Orion
Email: orion@orion-ir.ru
Россия, Kosinskaya ul. 9, Moscow, 111538
E. Korotaev
OAO NPO Orion
Email: orion@orion-ir.ru
Россия, Kosinskaya ul. 9, Moscow, 111538