320 × 256 avalanche array photodetector on the basis of ternary alloys of the A3B5 group with an InGaAs absorbing layer and an InAlAs barrier layer
- 作者: Iakovleva N.1, Boltar K.1,2, Sedneva M.1, Lopukhin A.1, Korotaev E.1
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隶属关系:
- OAO NPO Orion
- Moscow Institute of Physics and Technology (State University)
- 期: 卷 61, 编号 3 (2016)
- 页面: 348-351
- 栏目: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/196865
- DOI: https://doi.org/10.1134/S1064226916030219
- ID: 196865
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详细
320 × 256 avalanche array photodetector on the basis ternary alloys of the A3B5 group with an InGaAs absorbing (in the band of 0.9–1.7 μm) layer and InAlAs barrier layer is studied. The array of 320 × 256 elements was fabricated in a nBp nanoheterostructure by the mesa technology. The number of imperfect elements, the dependence of the dark current on the bias voltage, and the avalanche gain factor are measured.
作者简介
N. Iakovleva
OAO NPO Orion
编辑信件的主要联系方式.
Email: orion@orion-ir.ru
俄罗斯联邦, Kosinskaya ul. 9, Moscow, 111538
K. Boltar
OAO NPO Orion; Moscow Institute of Physics and Technology (State University)
Email: orion@orion-ir.ru
俄罗斯联邦, Kosinskaya ul. 9, Moscow, 111538; Institutskii per. 9, Dolgoprudnyi, Moscow oblast, 141700
M. Sedneva
OAO NPO Orion
Email: orion@orion-ir.ru
俄罗斯联邦, Kosinskaya ul. 9, Moscow, 111538
A. Lopukhin
OAO NPO Orion
Email: orion@orion-ir.ru
俄罗斯联邦, Kosinskaya ul. 9, Moscow, 111538
E. Korotaev
OAO NPO Orion
Email: orion@orion-ir.ru
俄罗斯联邦, Kosinskaya ul. 9, Moscow, 111538