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Analysis of characteristics of photodetectors based on InGaAs heteroepitaxial structures for 3D imaging
Iakovleva N.I., Boltar K.O., Sednev M.V., Nikonov A.V.
320 × 256 avalanche array photodetector on the basis of ternary alloys of the A3B5 group with an InGaAs absorbing layer and an InAlAs barrier layer
Iakovleva N.I., Boltar K.O., Sedneva M.V., Lopukhin A.A., Korotaev E.D.
Effect of Surface Recombination on the Parameters of Photodiodes Based on HgCdTe Semiconductor Structures
Iakovleva N.I.
Temperature dependence of diffusion length in MCT epitaxial layers
Nikiforov I.A., Nikonov A.V., Boltar K.O., Iakovleva N.I.
Short-Wave Infrared Camera with a Focal Plane Array Based on InGaAs/InP Heterostructures
Khamidullin K.A., Baliev D.L., Lazarev P.S., Boltar K.O., Polesskiy A.V., Burlakov I.D., Chepurnov E.L., Gusarova N.I., Popov S.V.
Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures
Iakovleva N.I., Boltar K.O., Sednev M.V., Patrashin A.I., Irodov N.A.
Multi-Row Photodetectors for the Short Wavelength IR Region Based on HgCdTe Heteroepitaxial Structures
Iakovleva N.I., Boltar K.O., Nikonov A.V., Egorov A.V.
Contactless Measurement of Electron Concentration in Undoped Homoepitaxial InSb Layers
Komkov O.S., Firsov D.D., Lvova T.V., Sedova I.V., Solov’ev V.A., Semenov A.N., Ivanov S.V.
A Novel Two-Dimensional Material Based Optical Fiber Surface Plasmon Resonance Sensor for Sensing of Organic Compounds in Infrared Spectrum Window
Singh S., Kaler R.S., Sharma S.
Performance Prediction of a Quantum Well Infrared Photodetector Using GeSn/SiGeSn Structure
Dey S., Sen G., Chakraborty V., Mukhopadhyay B.
Solid state photoelectronics: the current state and new prospects
Burlakov I.D., Dirochka A.I., Korneeva M.D., Ponomarenko V.P., Filachev A.M.
Photodetector of Shortwave Infrared Range of Format 640 × 512 Elements with Increased Dynamic Range
Kuznetsov P.A., Moschev I.S.
1 - 12 of 12 Items

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