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Vol 64, No 9 (2019)
Photodetectors with 384 × 288 Matrix Elements for the Infrared Range of 8–10 Microns
Zverev A.V., Suslyakov A.O., Sabinina I.V., Sidorov G.Y., Yakushev M.V., Kuzmin V.D., Varavin V.S., Remesnik V.G., Makarov Y.S., Predein A.V., Gorshkov D.V., Dvoretsky S.A., Vasil’ev V.V., Sidorov Y.G., Latyshev A.V., Kremis I.I.
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(Eng)
Vol 64, No 3 (2019)
Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe nBn Structure Grown by Molecular Beam Epitaxy
Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M., Dvoretsky S.A., Mikhailov N.N., Sidorov G.Y., Yakushev M.V.
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(Eng)
Vol 63, No 9 (2018)
Admittance of MIS Structures Based on MBE Hg1 – xCdxTe (x = 0.21–0.23) in a Wide Temperature Range
Voitsekhovskii A.V., Kulchitsky N.A., Nesmelov S.N., Dzyadukh S.M.
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(Eng)
Vol 62, No 3 (2017)
Investigation of spectral dependences of the absorption coefficient in InGaAs layers
Iakovleva N.I., Nikonov A.V.
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(Eng)
Vol 62, No 3 (2017)
Epitaxial structures for InGaAs/InP avalanche photodiodes
Budtolaev A.K., Khakuashev P.E., Chinareva I.V., Gorlachuk P.V., Ladugin M.A., Marmaluk A.A., Ryaboshtan Y.L., Yarotskaya I.V.
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(Eng)
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