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Current–Voltage Characteristics of n-B-p Structures with Absorbing In0.53Ga0.47As Layer
Sednev M.V., Boltar K.O., Irodov N.A., Demidov S.S.
Analytical Description of Avalanche Photodiode Characteristics. An Overview: Part II
Burlakov I.D., Filachev A.M., Kholodnov V.A.
Analysis of characteristics of photodetectors based on InGaAs heteroepitaxial structures for 3D imaging
Iakovleva N.I., Boltar K.O., Sednev M.V., Nikonov A.V.
Analytical description of avalanche photodiode characteristics. An overview: Part I
Burlakov I.D., Filachev A.M., Kholodnov V.A.
Analysis of Photoelectric Characteristics of UV-Range Focal Plane Arrays
Molkov P.I., Baliev D.L.
Principles of an analytical method of optimization of structure parameters of avalanche heterophotodiodes with separated regions of absorption and multiplication
Burlakov I.D., Drugova A.A., Kholodnov V.A.
Study of Photodiodes Based on the InGaAs Structure with a Boundary Wavelength of 2.06 μm
Boltar K.O., Irodov N.A., Sednev M.V., Marmalyuk A.A., Ladugin M.A., Ryaboshtan Y.L.
Analytical approach to selection of the optimum structure of avalanche heterophotodiodes based on direct bandgap semiconductors
Kholodnov V.A., Burlakov I.D., Drugova A.A.
Multi-Row Photodetectors for the Short Wavelength IR Region Based on HgCdTe Heteroepitaxial Structures
Iakovleva N.I., Boltar K.O., Nikonov A.V., Egorov A.V.
Influence of parameters of the semiconductor–dielectric interface on the current of the guard ring of silicon photodiodes
Demidov S.S., Klimanov E.A.
To the Problem of Optimization of Parameters of a Double Heterostructure Based on Direct-Gap Semiconductors for Avalanche Photodiodes
Kholodnov V.A., Burlakov I.D.
Modeling a subterahertz traveling-wave tube with a slow-wave structure of the double grating type and a sheet electron beam
Karetnikova T.A., Rozhnev A.G., Ryskin N.M., Torgashov G.V., Sinitsyn N.I., Grigoriev Y.A., Burtsev A.A., Shalaev P.D.
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