Автор туралы ақпарат

Sednev, M. V.

Шығарылым	Бөлім	Атауы	Файл
Том 61, № 3 (2016)	Articles from the Russian Journal Prikladnaya Fizika	Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures
Том 61, № 3 (2016)	Articles from the Russian Journal Prikladnaya Fizika	Focal plane arrays mesastructures formation by ion-beam etching
Том 61, № 3 (2016)	Articles from the Russian Journal Prikladnaya Fizika	Characteristics of heteroepitaxial structures Al_xGa_1–xN for p–i–n diode focal plane arrays
Том 62, № 9 (2017)	Articles from the Russian Journal Uspekhi Prikladnoi Fiziki	Analysis of characteristics of photodetectors based on InGaAs heteroepitaxial structures for 3D imaging
Том 63, № 9 (2018)	Articles from the Russian Journal Prikladnaya Fizika	Current–Voltage Characteristics of n-B-p Structures with Absorbing In_0.53Ga_0.47As Layer
Том 64, № 3 (2019)	Article	Study of Photodiodes Based on the InGaAs Structure with a Boundary Wavelength of 2.06 μm
Том 64, № 9 (2019)	Article	Analysis of Current–Voltage Characteristics in UV AlGaN Heterostructure FPAs