作者的详细信息
Berezovskaya, T. N.
| 期 | 栏目 | 标题 | 文件 |
| 卷 52, 编号 16 (2018) | 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY | InGaN/GaN QDs Nanorods: Processing and Properties | |
| 卷 52, 编号 16 (2018) | 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY | Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications | |
| 卷 53, 编号 12 (2019) | Fabrication, Treatment, and Testing of Materials and Structures | Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers |