作者的详细信息
Pokrovskiy, P. V.
期 | 栏目 | 标题 | 文件 |
卷 50, 编号 10 (2016) | Physics of Semiconductor Devices | On the main photoelectric characteristics of three-junction InGaP/InGaAs/Ge solar cells in a broad temperature range (–197°C ≤ T ≤ +85°C) | |
卷 53, 编号 14 (2019) | Nanostructure Devices | Capacitive Characteristics of High-Speed Photovoltaic Converters at Combined Lighting |