作者的详细信息
Feklistov, K.
期 | 栏目 | 标题 | 文件 |
卷 52, 编号 13 (2018) | Surfaces, Interfaces, and Thin Films | Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films |