作者的详细信息
Osinnykh, I. V.
| 期 | 栏目 | 标题 | 文件 |
| 卷 52, 编号 2 (2018) | Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors | Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlxGa1 – xN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy |