作者的详细信息
Pashkeev, D.
期 | 栏目 | 标题 | 文件 |
卷 50, 编号 2 (2016) | Physics of Semiconductor Devices | Pb1–xEuxTe alloys (0 ⩽ x ⩽ 1) as materials for vertical-cavity surface-emitting lasers in the mid-infrared spectral range of 4–5 μm | |
卷 53, 编号 12 (2019) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Excitonic Effects and Impurity–Defect Emission in GaAs/AlGaAs Structures Used for the Production of Mid-IR Photodetectors |