作者的详细信息
Strel’chuk, A. M.
期 | 栏目 | 标题 | 文件 |
卷 50, 编号 2 (2016) | Physics of Semiconductor Devices | Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties | |
卷 51, 编号 3 (2017) | Electronic Properties of Semiconductors | Effect of the energy of bombarding electrons on the conductivity of n-4H-SiC (CVD) epitaxial layers | |
卷 52, 编号 13 (2018) | Physics of Semiconductor Devices | Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Particles | |
卷 53, 编号 12 (2019) | Electronic Properties of Semiconductors | Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs |