Dependence of the Surface Morphology and Structure of CuIn0.95Ga0.05Se2 Films on the Selenization Temperature
- 作者: Gadzhiev T.1, Aliev M.1, Asvarov A.1, Gadzhieva R.1, Bilalov B.2, Ismailov A.3, Shomakhov Z.4,5
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隶属关系:
- Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
- Dagestan State Technical University
- Dagestan State University
- Berbekov Kabardino-Balkarian State University
- Kabardino-Balkarian Scientific Center, Russian Academy of Sciences
- 期: 卷 53, 编号 15 (2019)
- 页面: 1992-1998
- 栏目: Electronics Materials
- URL: https://journals.rcsi.science/1063-7826/article/view/207559
- DOI: https://doi.org/10.1134/S1063782619150077
- ID: 207559
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详细
Depending on the choice of the technology for producing CuInxGa1 – xSe2 films, a spread in the electrophysical and photoelectric parameters of photoconverters is observed, which is primarily related to the microstructure formed in the films and their phase composition. The investigation of phase-separation processes and the formation of a single-phase CuInxGa1 – xSe2 film is a key element in fabricating high-quality absorbing layers. In the study, CuIn0.95Ga0.05Se2 thin films are obtained by the two-stage selenization method of previously synthesized copper−indium−gallium layers of different thickness in the temperature range of 350°C ≤ T ≤ 550°C. The surface morphology, chemical composition, and structure of the synthesized CuIn0.95Ga0.05Se2 films are investigated via scanning electron microscopy, X-ray powder diffraction, and X-ray fluorescence. It is established that the synthesized films are polycrystalline and have a developed surface with an average crystallite size of 50–140 nm. On the basis of statistical analysis of the electron-microscopy data, the lowest temperature of the onset of the selenization process and the smallest required thickness of the metal layer for the formation of a continuous thin film CuIn0.95Ga0.05Se2 are determined. The obtained films can be used as the active photosensitive layer in highly efficient solar-radiation converters.
作者简介
T. Gadzhiev
Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
Email: shozamir@yandex.ru
俄罗斯联邦, Makhachkala, 367015
M. Aliev
Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
Email: shozamir@yandex.ru
俄罗斯联邦, Makhachkala, 367015
A. Asvarov
Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
Email: shozamir@yandex.ru
俄罗斯联邦, Makhachkala, 367015
R. Gadzhieva
Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
Email: shozamir@yandex.ru
俄罗斯联邦, Makhachkala, 367015
B. Bilalov
Dagestan State Technical University
Email: shozamir@yandex.ru
俄罗斯联邦, Makhachkala, 367015
A. Ismailov
Dagestan State University
Email: shozamir@yandex.ru
俄罗斯联邦, Makhachkala, 367000
Z. Shomakhov
Berbekov Kabardino-Balkarian State University; Kabardino-Balkarian Scientific Center, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: shozamir@yandex.ru
俄罗斯联邦, Nalchik, 360004; Nalchik, 360000