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Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation


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By means of in situ ultrahigh vacuum reflection electron microscopy, the nucleation of vacancy islands on wide terraces of the Si(100) surface is investigated. The temperature dependence of the displacement of a vacancy island nucleation center is determined in the process of heating a sample with a dc electric current. On the basis of a theoretical model, the effective electric charge of addimers is estimated in the direction across dimer rows of the surface. The effective charge has a positive sign and does not exceed 15 units of the elementary charge in the temperature range of 1020–1120°C.

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S. Sitnikov

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

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Email: sitnikov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

E. Rodyakina

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University

Email: sitnikov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090

A. Latyshev

Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University

Email: sitnikov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090

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