Сoncentric GaAs Nanorings Growth Modelling


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

The nanostructures formation process using the droplet epitaxy technique was investigated by Monte Carlo simulation. The simulation was fulfilled for two-dimensional and three-dimensional geometry substrates. The nanostructures morphology dependence on the growth temperature was presented. Crystal clusters, single and double rings were observed. The nanostructures shape was shown to be determined by the gallium diffusion length. The conditions of double rings formation during the droplet epitaxy were considered using analytical and numerical approaches. The factors that determine the rings location and shape were analyzed. The growth morphology was demonstrated to be dependent on the initial distance L between the droplets. The double ring formation was possible at a low droplet density only, when the As-stabilized region could be created between the droplets.

作者简介

A. Nastovjak

Rzhanov Institute of Semiconductor Physics, Siberian Branch

编辑信件的主要联系方式.
Email: alla@isp.nsc.ru
俄罗斯联邦, Novosibirsk 90, 630090

I. Neizvestny

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State Technical University

Email: alla@isp.nsc.ru
俄罗斯联邦, Novosibirsk 90, 630090; Novosibirsk, 630073

M. Vasilenko

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: alla@isp.nsc.ru
俄罗斯联邦, Novosibirsk 90, 630090

N. Shwartz

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State Technical University

Email: alla@isp.nsc.ru
俄罗斯联邦, Novosibirsk 90, 630090; Novosibirsk, 630073


版权所有 © Pleiades Publishing, Ltd., 2018
##common.cookie##