Molecular Beam Epitaxy of Materials Interfaces with Atomic Precision
- 作者: Ploog K.1
-
隶属关系:
- Paul Drude Institute for Solid State Electronics
- 期: 卷 52, 编号 5 (2018)
- 页面: 615-617
- 栏目: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization
- URL: https://journals.rcsi.science/1063-7826/article/view/203186
- DOI: https://doi.org/10.1134/S1063782618050238
- ID: 203186
如何引用文章
详细
In this contribution a few selected examples to engineer material interfaces in nanostructured solids with atomic precision by means of molecular beam epitaxy (MBE) are presented. The examples include 2D electron gas systems for quantum transport and mesoscopic physics, quantum cascade lasers, Sb-based materials, ferromagnet-semiconductor heterostructures, as well as oxide materials for electronics and quantum physics. Finally, the prospects to fabricate novel van-der-Waals heterostructures are briefly discussed.
作者简介
K. Ploog
Paul Drude Institute for Solid State Electronics
编辑信件的主要联系方式.
Email: KlausH.Ploog@t-online.de
德国, Berlin