The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode
- 作者: Ganiyev S.1, Azim Khairi M.1, Ahmad Fauzi D.1, Abdullah Y.2, Hasbullah N.1
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隶属关系:
- Department of Electrical and Computer Engineering
- Industrial Technology Division
- 期: 卷 51, 编号 12 (2017)
- 页面: 1666-1670
- 栏目: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/202079
- DOI: https://doi.org/10.1134/S1063782617120077
- ID: 202079
如何引用文章
详细
In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, Is, and barrier height, Φb, were not noticeable after the irradiation. However, the series resistance, Rs, has increased significantly with increasing radiation dose. In addition, temperature dependence current-voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant.
作者简介
Sabuhi Ganiyev
Department of Electrical and Computer Engineering
Email: nfadzlinh@iium.edu.my
马来西亚, Kuala Lumpur, 53100
M. Azim Khairi
Department of Electrical and Computer Engineering
Email: nfadzlinh@iium.edu.my
马来西亚, Kuala Lumpur, 53100
D. Ahmad Fauzi
Department of Electrical and Computer Engineering
Email: nfadzlinh@iium.edu.my
马来西亚, Kuala Lumpur, 53100
Yusof Abdullah
Industrial Technology Division
Email: nfadzlinh@iium.edu.my
马来西亚, Kuala Lumpur, 43000
N. Hasbullah
Department of Electrical and Computer Engineering
编辑信件的主要联系方式.
Email: nfadzlinh@iium.edu.my
马来西亚, Kuala Lumpur, 53100