Response of thermoelectric parameters of Bi0.5Sb1.5Te3 films to secondary recrystallization
- 作者: Boykov Y.1, Danilov V.1
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隶属关系:
- Ioffe Institute
- 期: 卷 51, 编号 8 (2017)
- 页面: 976-978
- 栏目: XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/200690
- DOI: https://doi.org/10.1134/S1063782617080048
- ID: 200690
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详细
Flash evaporation is used to grow Bi0.5Sb1.5Te3 films 1200 nm thick on mica substrates. The average lateral crystallite sizes in the as-grown films are ~800 nm. The (0001) plane in the crystallites is preferentially parallel to the substrate plane. After heat treatment in an argon atmosphere, the effective lateral size of crystallites in which the third-order axis is perpendicular to the substrate plane increased by a factor of 3–5. The crystallites were preferentially oriented in the substrate plane as well. The thermoelectric-power parameter of Bi0.5Sb1.5Te3 films after their heat treatment in an inert environment increased approximately twofold to values close to that of the corresponding single crystals.
作者简介
Yu. Boykov
Ioffe Institute
编辑信件的主要联系方式.
Email: yu.boikov@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Danilov
Ioffe Institute
Email: yu.boikov@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021