Alloyed Si/Al-based ohmic contacts to AlGaN/GaN nitride heterostructures
- 作者: Slapovskiy D.1,2, Pavlov A.2, Pavlov V.2, Klekovkin A.2,3
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隶属关系:
- Institute of Microelectronics Technology and High-Purity Materials
- Institute of Ultrahigh-Frequency Semiconductor Electronics
- Lebedev Physical Institute
- 期: 卷 51, 编号 4 (2017)
- 页面: 438-443
- 栏目: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/199705
- DOI: https://doi.org/10.1134/S1063782617040194
- ID: 199705
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详细
For the first time in Russia, the Si/Al/Ti/Au alloyed contact composition is investigated for the formation of ohmic contacts to AlGaN/GaN heterostructures using thermal annealing. The obtained results are compared with those for conventional Ti/Al/Ni/Au ohmic contacts. Use of the composition under investigation makes it possible to decrease the annealing temperature to 675–700°C, which results in improvement in the morphology of alloyed ohmic contacts in comparison with conventional contacts. The value of the contact resistance using the Si/Al-based composition to the AlGaN/GaN heterostructure is obtained in relation to the temperature and annealing duration. It is shown that no qualitative change in the resistance occurs at an annealing duration of several minutes in the temperature range of 700–750°C. In the temperature range of 675–700°C, there is an asymptotic decrease in the contact resistance with increasing annealing duration. The smallest value of the contact resistance amounts to 0.41 Ω mm.
作者简介
D. Slapovskiy
Institute of Microelectronics Technology and High-Purity Materials; Institute of Ultrahigh-Frequency Semiconductor Electronics
编辑信件的主要联系方式.
Email: dslapovskiy@gmail.com
俄罗斯联邦, Chernogolovka, Moscow oblast, 142432; Moscow, 117105
A. Pavlov
Institute of Ultrahigh-Frequency Semiconductor Electronics
Email: dslapovskiy@gmail.com
俄罗斯联邦, Moscow, 117105
V. Pavlov
Institute of Ultrahigh-Frequency Semiconductor Electronics
Email: dslapovskiy@gmail.com
俄罗斯联邦, Moscow, 117105
A. Klekovkin
Institute of Ultrahigh-Frequency Semiconductor Electronics; Lebedev Physical Institute
Email: dslapovskiy@gmail.com
俄罗斯联邦, Moscow, 117105; Moscow, 119991