Modification of the thermal relaxation kinetics of the photoinduced (at T = 425 K) metastable dark conductivity of a-Si:H films by weak illumination during the initial stage of relaxation
- 作者: Kurova I.1, Ormont N.1
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隶属关系:
- Faculty of Physics
- 期: 卷 51, 编号 4 (2017)
- 页面: 417-419
- 栏目: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/199688
- DOI: https://doi.org/10.1134/S1063782617040108
- ID: 199688
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详细
The effect of weak illumination during the initial stage of relaxation of the dark metastable conductivity of an undoped a-Si:H film, photoinduced at T = 425 K, on the rate of its subsequent thermal relaxation is studied. It is found that the kinetics of relaxation upon illumination or in the absence of illumination is described by stretched exponents with the parameters τ0 and β, which are smaller in the case of illumination. It is shown that a decrease in these parameters increases the rate of thermal relaxation of the dark conductivity of the film. Because the temperature and the illumination intensities at which the study is carried out are low, the changes in the relaxation rate of the metastable conductivity are unlikely associated with significant restructuring of the amorphous network. This may be due to changes in the system of hydrogen bonds, which can result, in particular, from the generation and relaxation of slow photoinduced defects under the influence of illumination.
作者简介
I. Kurova
Faculty of Physics
Email: ormont@phys.msu.ru
俄罗斯联邦, Moscow, 119992
N. Ormont
Faculty of Physics
编辑信件的主要联系方式.
Email: ormont@phys.msu.ru
俄罗斯联邦, Moscow, 119992