Elastic strains and delocalized optical phonons in AlN/GaN superlattices
- 作者: Pankin D.1,2, Smirnov M.1, Davydov V.3, Smirnov A.3, Zavarin E.3, Lundin W.3
-
隶属关系:
- St. Petersburg State University
- Resource Center for Optical and Laser Materials Research
- Ioffe Physical–Technical Institute
- 期: 卷 50, 编号 8 (2016)
- 页面: 1043-1048
- 栏目: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/197616
- DOI: https://doi.org/10.1134/S1063782616080169
- ID: 197616
如何引用文章
详细
In the context of the dielectric continuum model, a correlation is established between the frequencies of delocalized A(TO) and E(LO) phonons in the Raman spectra of short-period AlN/GaN superlattices and the ratio between the layer thicknesses in the structure. It is shown that elastic strains produced in the materials of the layer during superlattice growth only slightly influence the correlation dependence of the frequencies of A(TO) and E(LO) modes with high intensities in the Raman spectra on the structural parameter defining the ratios between the layer thicknesses. The results of calculations of the phonon frequencies are in good agreement with available experimental data and can be used for spectroscopic diagnostics of AlN/GaN superlattices.
作者简介
D. Pankin
St. Petersburg State University; Resource Center for Optical and Laser Materials Research
编辑信件的主要联系方式.
Email: dmitrii.pankin@spbu.ru
俄罗斯联邦, St. Petersburg, 199034; St. Petersburg, 199034
M. Smirnov
St. Petersburg State University
Email: dmitrii.pankin@spbu.ru
俄罗斯联邦, St. Petersburg, 199034
V. Davydov
Ioffe Physical–Technical Institute
Email: dmitrii.pankin@spbu.ru
俄罗斯联邦, St. Petersburg, 194021
A. Smirnov
Ioffe Physical–Technical Institute
Email: dmitrii.pankin@spbu.ru
俄罗斯联邦, St. Petersburg, 194021
E. Zavarin
Ioffe Physical–Technical Institute
Email: dmitrii.pankin@spbu.ru
俄罗斯联邦, St. Petersburg, 194021
W. Lundin
Ioffe Physical–Technical Institute
Email: dmitrii.pankin@spbu.ru
俄罗斯联邦, St. Petersburg, 194021