Информация об авторе
Emtsev, V.
Выпуск | Раздел | Название | Файл |
Том 50, № 10 (2016) | Electronic Properties of Semiconductors | Some challenging points in the identification of defects in floating-zone n-type silicon irradiated with 8 and 15 MeV protons | |
Том 51, № 12 (2017) | Electronic Properties of Semiconductors | Radiation-produced defects in germanium: Experimental data and models of defects | |
Том 52, № 7 (2018) | Physics of Semiconductor Devices | Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System | |
Том 52, № 13 (2018) | Electronic Properties of Semiconductors | Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge |