Информация об авторе
Osinnykh, I.
| Выпуск | Раздел | Название | Файл |
| Том 52, № 2 (2018) | Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors | Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlxGa1 – xN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy |