Информация об авторе
Sysoev, D. K.
Выпуск | Раздел | Название | Файл |
Том 52, № 3 (2018) | Physics of Semiconductor Devices | Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model |