Examination of Self-Catalyzed III–V Nanowire Growth by Monte Carlo Simulation
- Авторы: Nastovjak A.1, Usenkova A.2, Shwartz N.1,2, Neizvestny I.1,2
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Учреждения:
- Rzhanov Institute of Semiconductor Physics
- Novosibirsk State Technical University
- Выпуск: Том 53, № 16 (2019)
- Страницы: 2106-2109
- Раздел: Nanostructures Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/207603
- DOI: https://doi.org/10.1134/S1063782619120194
- ID: 207603
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Аннотация
The main features of self-catalyzed III–V nanowire growth according to the vapor-liquid-solid mechanism were analyzed using Monte Carlo simulation. The nanowire growth kinetics, flux ratio influence on the nanowire morphology and growth rate were considered. For some growth conditions, the self-equalization effect of metal drop sizes during the self-catalyzed III–V nanowire growth was demonstrated. It is revealed that, only under the adsorption growth mode, all drop sizes reach a single stationary value.
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Об авторах
A. Nastovjak
Rzhanov Institute of Semiconductor Physics
Автор, ответственный за переписку.
Email: alla@isp.nsc.ru
Россия, Novosibirsk, 630090
A. Usenkova
Novosibirsk State Technical University
Email: alla@isp.nsc.ru
Россия, Novosibirsk, 630087
N. Shwartz
Rzhanov Institute of Semiconductor Physics; Novosibirsk State Technical University
Email: alla@isp.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630087
I. Neizvestny
Rzhanov Institute of Semiconductor Physics; Novosibirsk State Technical University
Email: alla@isp.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630087