Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities

Аннотация

Photovoltaic structures on the basis of GaAs p–i–n junctions with a different number of In_0.4Ga_0.6As layers in the space-charge region forming quantum-confined objects are experimentally and theoretically investigated. For all structures, the dependences of the open-circuit voltage on the solar-irradiation concentration are analyzed. It is shown that the implantation of quantum objects leads to the dominance of recombination in them over recombination in the matrix, which manifests itself in a drop in the open-circuit-voltage. An increase in the number of In_0.4Ga_0.6As layers leads to a proportional increase in the recombination rate, which is expressed in a proportional increase in the “saturation” current and corresponds to the model proposed in the study.