Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films
- Авторы: Tyschenko I.1, Cherkov A.2, Volodin V.1,2, Voelskow M.3
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Учреждения:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Institute of Ion-Beam Physics and Materials Research
- Выпуск: Том 51, № 9 (2017)
- Страницы: 1240-1246
- Раздел: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/201288
- DOI: https://doi.org/10.1134/S1063782617090226
- ID: 201288
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Аннотация
The systematic features of the formation of Ge nanocrystals in SiO2 thin films implanted with Ge+ ions and then subjected to high-temperature annealing (1130°C) are studied in relation to hydrostatic pressure. It is established that annealing at atmospheric pressure is accompanied by the diffusion of Ge atoms from the implantation region to the Si substrate and does not induce the formation of Ge nanocrystals. An increase in pressure during annealing yields a deceleration in the diffusion of germanium into silicon and is accompanied by the formation of twinned lamellae at the Si/SiO2 interface (at pressures of ~103 bar) or by the nucleation and growth of Ge nanocrystals (at pressures of ~104 bar) in the SiO2 film. The results are discussed on the basis of the concept of a change in the activation volume of the formation and migration of point defects under conditions of compression.
Об авторах
I. Tyschenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Автор, ответственный за переписку.
Email: tys@isp.nsc.ru
Россия, Novosibirsk, 630090
A. Cherkov
Novosibirsk State University
Email: tys@isp.nsc.ru
Россия, Novosibirsk, 630090
V. Volodin
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: tys@isp.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090
M. Voelskow
Institute of Ion-Beam Physics and Materials Research
Email: tys@isp.nsc.ru
Германия, Dresden, D-01314