Electron exchange between neutral and ionized impurity iron centers in vitreous arsenic selenide
- Авторы: Marchenko A.1, Terukov E.2, Egorova A.3, Kiselev V.1, Seregin P.1
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Учреждения:
- Herzen State Pedagogical University of Russia
- Ioffe Physical–Technical Institute
- St.-Petersburg Mining University
- Выпуск: Том 51, № 4 (2017)
- Страницы: 449-453
- Раздел: Amorphous, Vitreous, and Organic Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/199720
- DOI: https://doi.org/10.1134/S1063782617040133
- ID: 199720
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Аннотация
Impurity iron atoms in vitreous arsenic-selenide As2Se3 films modified by iron form one-electron donor centers with an ionization energy of 0.24 (3) eV (the energy is counted from the conduction-band bottom). The Fermi level is shifted with an increase in the iron concentration from the mid-gap to the donorlevel position of iron due to the filling of one-electron states of the acceptor type lying below the Fermi level. At an iron concentration of ≥3 at %, the electron-exchange process is observed between neutral and ionized iron centers resulting in a change both in the electron density and in the tensor of the electric-field gradient at iron-atom nuclei with increasing temperature above 350 K.
Об авторах
A. Marchenko
Herzen State Pedagogical University of Russia
Email: ppseregin@mail.ru
Россия, St. Petersburg, 191186
E. Terukov
Ioffe Physical–Technical Institute
Email: ppseregin@mail.ru
Россия, St. Petersburg, 194021
A. Egorova
St.-Petersburg Mining University
Email: ppseregin@mail.ru
Россия, St. Petersburg, 199106
V. Kiselev
Herzen State Pedagogical University of Russia
Email: ppseregin@mail.ru
Россия, St. Petersburg, 191186
P. Seregin
Herzen State Pedagogical University of Russia
Автор, ответственный за переписку.
Email: ppseregin@mail.ru
Россия, St. Petersburg, 191186