A new simulation model for inhomogeneous Au/n-GaN structure
- Авторы: Kavasoglu N.1,2, Kavasoglu A.1,2, Metin B.1,2
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Учреждения:
- Faculty of Sciences, Department of Physics, Photovoltaic Material and Device Laboratory
- Faculty of Sciences, Department of Physics, Solid State Electronics Laboratory
- Выпуск: Том 50, № 5 (2016)
- Страницы: 616-620
- Раздел: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/197087
- DOI: https://doi.org/10.1134/S1063782616050134
- ID: 197087
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Аннотация
The larger the device area, the more difficult to carry on homogeneity during the fabrication and following treatments. Structural inhomogeneity may indicate themselves in variations in local electronic device parameters. Electrical current through the potential barriers is exponentially sensitive to the local device parameters and its fluctuations in the Schottky devices. A new simulation program is developed to describe a relation between multiple, random barrier heights and current-voltage characteristics of the Schottky device. We model the barrier height inhomogeneity in terms of random microcells connected in parallel, which have different barrier height values. Analyzing the integral of the simulated light current-voltage curves show that fluctuations of the local barrier height result in a degradation of the open circuit voltage, fill factor and in consequence, of the over all power conversation efficiency. The implementation described here is quite general and can be used to simulate any device parameter fluctuations in the Schottky devices.
Об авторах
Nese Kavasoglu
Faculty of Sciences, Department of Physics, Photovoltaic Material and Device Laboratory; Faculty of Sciences, Department of Physics, Solid State Electronics Laboratory
Автор, ответственный за переписку.
Email: knesese@gmail.com
Турция, Mugla, 48000; Mugla, 48000
Abdulkadir Kavasoglu
Faculty of Sciences, Department of Physics, Photovoltaic Material and Device Laboratory; Faculty of Sciences, Department of Physics, Solid State Electronics Laboratory
Email: knesese@gmail.com
Турция, Mugla, 48000; Mugla, 48000
Bengul Metin
Faculty of Sciences, Department of Physics, Photovoltaic Material and Device Laboratory; Faculty of Sciences, Department of Physics, Solid State Electronics Laboratory
Email: knesese@gmail.com
Турция, Mugla, 48000; Mugla, 48000