Informaçao sobre o Autor
Oganesyan, G. A.
Edição | Seção | Título | Arquivo |
Volume 50, Nº 10 (2016) | Electronic Properties of Semiconductors | Some challenging points in the identification of defects in floating-zone n-type silicon irradiated with 8 and 15 MeV protons | |
Volume 51, Nº 8 (2017) | Spectroscopy, Interaction with Radiation | Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers | |
Volume 51, Nº 12 (2017) | Electronic Properties of Semiconductors | Radiation-produced defects in germanium: Experimental data and models of defects | |
Volume 52, Nº 13 (2018) | Electronic Properties of Semiconductors | Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge |