Informaçao sobre o Autor
Pashkeev, D. A.
Edição | Seção | Título | Arquivo |
Volume 50, Nº 2 (2016) | Physics of Semiconductor Devices | Pb1–xEuxTe alloys (0 ⩽ x ⩽ 1) as materials for vertical-cavity surface-emitting lasers in the mid-infrared spectral range of 4–5 μm | |
Volume 53, Nº 12 (2019) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Excitonic Effects and Impurity–Defect Emission in GaAs/AlGaAs Structures Used for the Production of Mid-IR Photodetectors |